The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Nov. 12, 1999
Applicant:
Inventor:
Robin Lee, Hsinchu Hsien, TW;
Assignees:
United Microelectronics Corp., Hsinchu, TW;
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438305 ; 438301 ; 438303 ; 438291 ;
Abstract
A Method for forming a dynamic random access memory device with an ultra-short channel and an ultra-shallow junction is described in the invention. In the invention, the spacer is used as a mask to define the channel length of the device, so that the channel length of the device is not limited by the resolution of the photolithography process, and the performance of the device is improved thereby. Furthermore, an inversion layer serves as a junction to reduce the electric field; thus, the reliability of the device is increased.