The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Dec. 28, 1998
Yao-Yi Cheng, Taipei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Chung-Shi Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for forming upon a substrate employed within a microelectronics fabrication a composite dielectric layer with enhanced adhesion. There is first provided a substrate. There is then formed over and upon the substrate a first dielectric layer comprising a silicon, oxygen and nitrogen containing dielectric material in contact with a second dielectric layer comprising an organic polymer spin-on-polymer (SOP) dielectric material. The interface between the dielectric layers may be treated by ion implantation methods to provide the resulting silicon, oxygen and nitrogen containing dielectric layer composition to provide the composite dielectric layer with enhanced adhesion at the interface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile