The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2000

Filed:

Oct. 04, 1998
Applicant:
Inventors:

Nien-Yu Tsai, Taipei, TW;

Hong-Long Chang, Hsin-Chu, TW;

Chun-Wei Chen, Hsin-Chu, TW;

Ming-Li Kung, Chi-Lung, TW;

Assignees:

ProMos Technologies, Inc., Hsinchu, TW;

Mosel Vitelic, Inc., Hsinchu, TW;

Seimens AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438669 ; 438725 ; 438720 ; 438672 ;
Abstract

A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; oxidizing the metal interconnect structure and the tungsten via plugs to form a metal oxide layer over the metal interconnect structure and tungsten via plugs; and performing a wet strip on the metal interconnect structure.


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