The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
May. 04, 1998
Applicant:
Inventor:
David L Chapek, Nashua, NH (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438513 ; 438528 ; 438798 ;
Abstract
A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are provided. The method comprises the steps of: providing a layer of silicon dioxide; implanting hydrogen ions into the layer of silicon dioxide by plasma source ion implantation; and forming a layer of polycrystalline silicon on the layer of silicon dioxide.
Chapek, David. (2000). Method for controlling the morphology of deposited silicon on a silicon (U.S. Patent No. 6143631). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6143631
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile