The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Dec. 02, 1996
Kazuo Sato, Takatsuki, JP;
Kenji Ueda, Suita, JP;
Michio Morita, Habikino, JP;
Fumihiko Noro, Ikoma, JP;
Kyoko Miyamoto, Kyoto, JP;
Hideaki Onishi, Kyoto, JP;
Kazuo Umeda, Nara, JP;
Kazuya Kubo, Yawata, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating film is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.