Film patterning method utilizing post-development residue remover

Abstract

A film patterning method using resist as a mask, comprises the steps of forming a film 2 on a substrate 1, coating resist 3 on the film 2, exposing the resist 3, developing the resist 3 by a liquid phase developing solution 4, removing the liquid developing solution 4 from a surface of the film 2, irradiating ultraviolet rays onto the resist 3, which remains on the film 2 by the developing step, in an oxygen containing atmosphere, removing developed residue of the surface of the resist 3 by supplying an alkali aqueous solution 5 to the resist 3 which has remained on the film 2, and forming patterns of the film 2 by etching the film 2 exposed from the resist 3. Accordingly, the unnecessary residue of resist can be removed from the substrate in a short time after the development.