The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Jul. 01, 1999
Jiue Wen Weng, Hsin-Chu, TW;
Ruey-Yun Shiue, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for making metal capacitors for deep submicrometer processes for integrated circuits is described. The method provides metal capacitors with high capacitance per unit area, low voltage coefficients, and excellent capacitance distribution (uniformity) across the substrate. The method involves depositing a first insulating layer on a substrate having completed semiconductor devices. A first metal layer is deposited and patterned to form bottom electrodes and interconnecting metal lines. A thin capacitor dielectric layer is deposited, and a thin second metal or TiN layer is deposited and patterned to form the top electrodes. A thick second insulating layer is deposited and planarized, and an array of via holes are etched to the top electrodes to provide for low-resistance contacts and via holes for the interconnecting metal lines. A third conducting metal layer is deposited over the second insulating layer and in the via holes, and is patterned to form a thick metal plate over the capacitors to provide low-resistance contacts to the capacitors and concurrently to form the next level of metal interconnections.