The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Oct. 20, 1997
Rama I Hegde, Austin, TX (US);
Dean J Denning, Del Valle, TX (US);
Jeffrey L Klein, Austin, TX (US);
Philip J Tobin, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A A method for forming an improved copper barrier layer begins by providing a silicon-containing layer (10). A physical vapor deposition process is then used to form a thin tantalum nitride amorphous layer (12). A thin amorphous titanium nitride layer (14) is then deposited over the amorphous tantalum nitride layer. A collective thickness of the tantalum nitride and titanium nitride layers 12 and 14 is roughly 400 angstroms or less. A copper material 16 is then deposited on top of the amorphous titanium nitride wherein the composite tantalum nitride layer 12 and titanium nitride layer 14 effectively prevents copper from diffusion from the layer 16 to the layer 10.