The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Dec. 23, 1998
Applicant:
Inventors:
Wayne Tan, Taipei, TW;
Kun-Chi Lin, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ;
Abstract
A method of fabricating a dynamic random access memory includes forming a dummy layer over the isolation layer, in which the dummy layer has a higher etching selectivity than oxide. A dielectric layer is applied to isolate the bit lines. Then, a passivation layer is formed over the entire structure and a node contact opening is formed thereon. A liner oxide layer is then formed in the node contact opening to isolate the bit lines and the electrode of the capacitor. The node contact opening has a larger misalignment tolerance.