The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2000

Filed:

Oct. 08, 1997
Applicant:
Inventors:

Hormazdyar M Dalal, Milton, NY (US);

Du Binh Nguyen, Danbury, CT (US);

Hazara S Rathore, Stormville, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438624 ; 438618 ; 438622 ; 438629 ; 438631 ; 438633 ; 438634 ; 438637 ; 438674 ; 438675 ; 257750 ; 257752 ; 257760 ; 257762 ; 257763 ; 257764 ; 257765 ; 257766 ;
Abstract

The present invention relates generally to a new sequence of methods and materials to improve the process yield and to enhance the reliability of multilevel interconnection with sub-half-micron geometry by making judicious use of composite insulators to prevent metal thinning over hard metal via plugs and by preventing process induced metal spike formation. The method takes advantage of the double damascene process. The metal spikes and the metal thinning resulting from over etch process is prevented in this method by using a pair of insulators which require different chemistries for etching.


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