The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jul. 02, 1999
Kung Linliu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method of forming a bottom storage node of a DRAM capacitor over a contact plug is disclosed. The method comprises the steps of: depositing an oxide layer over the contact plug; etching the oxide layer using a first photoresist layer having with a first masking pattern, the first masking pattern allowing the removal of the oxide layer over the contact plug; depositing a polysilicon layer over the oxide layer and in electrical contact with the contact plug; forming a second photoresist layer having a second masking pattern onto the polysilicon layer, the second masking pattern being substantially similar to the first masking pattern, but rotated by a predetermined angle; and etching the polysilicon layer in accordance with the second photoresist layer until the oxide layer is reached.