The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Oct. 16, 1998
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ;
U.S. Cl.
CPC ...
330277 ; 330307 ;
Abstract
An object is to obtain an amplification circuit which provides a high gain even with a low-voltage power supply. The amplification circuit comprises an MOS transistor (M1) having a gate receiving an amplified signal (RFin), a source electrically connected to ground, and a drain electrically connected to a supply voltage (VDD), wherein the back gate-source voltage (Vbs) of the MOS transistor (M1) is made larger as the gate-source voltage (Vgs) of the MOS transistor (M1) becomes larger, thereby making the threshold voltage (VT) of the MOS transistor (M1) smaller.