The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Nov. 12, 1996
Yung-Haw Liaw, Hsin-Chu, TW;
May-Ling Chu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A chemical vapor deposition (CVD) method for forming with enhanced sheet resistance uniformity tungsten silicide layers upon substrates. There is formed upon a first substrate within a chemical vapor deposition (CVD) reactor chamber a first tungsten silicide layer through a chemical vapor deposition (CVD) method. The first substrate is then removed from the chemical vapor deposition (CVD) reactor chamber. The chemical vapor deposition (CVD) reactor chamber is then cleaned with a fluorine containing plasma and subsequently purged with a mixture of silane and an inert gas. There may then be formed with enhanced sheet resistance uniformity upon a second substrate within the chemical vapor deposition (CVD) reactor chamber a second tungsten silicide layer through the chemical vapor deposition (CVD) method.