The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2000

Filed:

Jul. 01, 1999
Applicant:
Inventors:

Anthony G Domenicucci, New Paltz, NY (US);

Lynne M Gignac, Beacon, NY (US);

Yun-Yu Wang, Poughquag, NY (US);

Horatio S Wildman, Wappingers Falls, NY (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257751 ; 257157 ; 257764 ; 257768 ;
Abstract

A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.


Find Patent Forward Citations

Domenicucci, Anthony. (2000). Flat interface for a metal-silicon contact barrier film (U.S. Patent No. 6124639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6124639

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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