The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Feb. 20, 1998
Applicant:
Inventors:
Shinji Saito, Yokohama, JP;
Genichi Hatakoshi, Yokohama, JP;
Masaaki Onomura, Kawasaki, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Norio Iizuka, Hackhoji, JP;
Chiharu Nozaki, Yokohama, JP;
Johji Nishio, Kawasaki, JP;
Masayuki Ishikawa, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 86 ; 257 94 ; 257101 ;
Abstract
In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.