The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Jan. 19, 1999
Jyh-Haur Wang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for fabricating a core device, featuring an LDD source/drain region, with a sharp dopant profile, while simultaneously fabricating an I/O device, featuring an LDD source/drain region, with a graded dopant profile, has been developed. The process features the initial creation of the core device, LDD source/drain region, via an ion implantation, and RTA procedure, resulting in an LDD region with a sharp dopant profile, needed for enhanced performance. The I/O device, LDD source/drain region, is next addressed via an ion implantation procedure, followed by the creation of insulator spacers, formed at a temperature that TED occurs, to allow a graded dopant profile to be achieved for the I/O device, source/drain region, thus reducing hot carrier reliability risks.