The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Dec. 23, 1997
Applicant:
Inventors:
Frank Hintermaier, Munich, DE;
Bryan Hendrix, Danbury, CT (US);
Jeff Roeder, Brookfield, CT (US);
Peter Van Buskirk, Newtown, CT (US);
Thomas H Baum, New Fairfield, CT (US);
Assignees:
Advanced Technology Materials, Inc., Danbury, CT (US);
Infineon Technologies Corporation, Cupertino, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427269 ; 427287 ; 427256 ; 427 81 ; 4272557 ; 427309 ; 4272481 ;
Abstract
A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.