The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Aug. 20, 1999
Applicant:
Inventors:
Zin-Chein Wei, Hsin-Chu, TW;
Yuh-Jier Mii, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257620 ; 257618 ; 257635 ; 257637 ;
Abstract
A wafer structure and method of forming a wafer structure with all of the dielectric material and conducting material films removed from the outer periphery of the wafer in order to protect the dielectric and conducting films from damage due to wafer handling, storage, or clamping. The dielectric or conducting material is removed from the wafer edge using wafer edge exposure or edge bead rinse methods. The wafer edge exposure method is carried out at the same time the dielectric or conducting layer is being patterned.