The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Oct. 19, 1998
Jeremy A Theil, Mountain View, CA (US);
Min Cao, Mountain View, CA (US);
Dietrich W Vook, Menlo Park, CA (US);
Frederick A Perner, Palo Alto, CA (US);
Xin Sun, San Jose, CA (US);
Shawming Ma, Sunnyvale, CA (US);
Gary W Ray, Mountain View, CA (US);
Wayne M Greene, Los Gatos, CA (US);
Kit M Cham, Cupertino, CA (US);
Steven A Lupi, Gilroy, CA (US);
Agilent Technologies, Palo Alto, CA (US);
Abstract
An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.