The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Aug. 20, 1998
Tadashi Ohashi, Sagamihara, JP;
Katuhiro Chaki, Hadano, JP;
Ping Xin, Sagamihara, JP;
Tatsuo Fujii, Tokuyama, JP;
Katsuyuki Iwata, Kudamatu, JP;
Shinichi Mitani, Numazu, JP;
Takaaki Honda, Mishima, JP;
Yuusuke Sato, Tokyo, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Toshiba Kikai Kabushikikaisha, Tokyo, JP;
Abstract
There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.