Non-volatile semiconductor memory device for selective cell flash

Abstract

Disclosed herein is a non-volatile semiconductor memory device comprising a mode signal output means for outputting a mode signal for conducting flash programming or flash erasing, a group selection signal output means for outputting a group selection signal for selecting a row decoding group, a first selection means for selecting the row decoding group controlling the word line in accordance with 10 the group selection signal, and a second selection means selecting the word line corresponding to the memory cell from a plurality of the word lines controlled by the row decoding group selected by the first selection means. In the present inventions the time required for the flash programming and the flash erasing can be reduced without the addition of a further element and the chip areas can be reduced.