The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
May. 04, 1998
Applicant:
Inventors:
Takatoshi Kinoshita, Hyogo, JP;
Hiroshi Kadowaki, Hyogo, JP;
Assignees:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Ryoden Semiconductor System Engineering Corporation, Hyogo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438706 ; 438725 ; 216 41 ;
Abstract
Reaction products due to etching of a semiconductor sample by using a reactive gas are removed by using a liquid chemical that contains sulfuric acid and hydrofluoric acid at a volume mixing ratio of (5 to 7):(1/400 to 1/1000) and is kept at 25.degree.-70.degree. C. Reaction products and a resist mask are removed simultaneously by using a liquid chemical that contains sulfuric acid, a hydrogen peroxide solution, and hydrofluoric acid at a volume mixing ratio of (5 to 7):1:(1/400 to 1/1000) and is kept at 70.degree.-100.degree. C.