The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Jun. 04, 1999
Chih Ming Chen, Hsinchu, TW;
Worldwide Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method for making a MOSFET in a semiconductor substrate with self aligned source and drain contacts. The method comprises forming a gate oxide layer on the substrate followed by forming a polysilicon gate on the gate oxide layer. A liner oxide layer is formed on the gate and the gate oxide layer and nitride sidewall spacers are formed on the liner oxide layer and adjacent the sidewalls of the gate. A portion of the liner oxide layer and gate oxide layer that lies between the sidewalls of the gate and the nitride sidewall spacers is removed. An oxide layer is then formed around the gate. Next, source and drain regions are formed in the substrate adjacent to the sidewalls of the gate. Finally, a source contact and a drain contact is formed in the area between the gate and the nitride sidewall spacers.