The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Jun. 18, 1997
Bruce David Gittleman, Scottsdale, AZ (US);
Vu Bui, West Nyack, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of minimizing intragranular oxidation of TiON and providing a low resistivity film that provides for highly textured metal overlayers. The method provides an in situ diffusion barrier for subsequent high temperature metal deposition or processes. An in situ process eliminates the need for a fortification anneal immediately following the barrier deposition, thus reducing the number of metal processing steps and providing for a more economical process or for subsequent high temperature metal deposition. The surface properties of the TiON allow for improved texture in those metal overlayers as well as low diffusion barrier resistivity.