The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Jul. 25, 1997
Applicant:
Inventors:
Robert Louis Hodges, Lewisville, TX (US);
Loi Ngoc Nguyen, Carrollton, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438649 ; 438682 ; 438683 ;
Abstract
The present invention provides improved device speed by using two silicides with two different compositions: one silicide is overlaid on a polysilicon gate layer, to form a 'polycide' layer with improved sheet resistance, and the other is clad on at least some 'active' areas of the monocrystalline silicon, to form a 'salicided' active area with improved sheet and contact resistance. Preferably one silicide is a reaction product and the other is deposited.