The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Mar. 31, 1998
Victoria J Bruce, Austin, TX (US);
Gregory A Dabney, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Various methods are described for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces. Each method includes forming a layer of an antireflective coating material upon the backside surface of the substrate prior to detecting electromagnetic radiation emanating from the backside surface. The layer of an antireflective coating material reduces reflections which contribute to background noise levels. As a result of reduced background noise levels, the detection capabilities of the methods and the resolutions of any scanned images produced using the methods are improved. A first method includes forming a layer of an antireflective coating material upon the backside surface of the substrate, directing a beam of electromagnetic radiation toward the backside surface of the substrate, and detecting an electrical response from the electronic circuit. A second method includes the forming of the layer of an antireflective coating material upon the backside surface of the substrate, directing the beam of electromagnetic radiation toward the backside surface of the substrate, and detecting a portion of the beam of electromagnetic radiation reflected by the electronic circuit. A third method includes forming the layer of antireflective coating material upon the backside surface of the substrate, supplying electrical power to the electronic circuit such that any crystalline defects within the electronic circuit result in the emission of electromagnetic radiation, and detecting a portion of the electromagnetic radiation exiting the semiconductor substrate through the backside surface.