The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Nov. 27, 1998
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438296 ; 438404 ; 438424 ;
Abstract
A method for fabricating shallow trench isolation stricture wherein a surface oxide layer and a polycrystalline silicon buffer layer are formed on a semiconductor body. Openings are formed through the layers and into the body that constitute trenches. A lining oxide layer is formed on the trench and buffer layer surfaces. A thick oxide layer is deposited on the body to fill the trench, and the layer planarized by chemical-mechanical polishing. The exposed portions of the buffer layer are removed and the horizontal surface oxide layer portions removed by anisotropic etching.