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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6096645 B1

PDFFull Text
Date of Patent:
Aug. 01, 2000

Filed:

Mar. 04, 1998

Method of making ic devices having stable cvd titanium nitride films

Applicant:
Inventors:

Yung-Tsun Lo, Luo-Dong, TW;

Hui-lun Chen, Yi-lan, TW;

Wen-Yu Ho, Yeong-Kang, TW;

Sung-chun Hsieh, Taipei, TW;

Feng-hsien Chao, Jang-Huah, TW;

Assignee:

Mosel Vitelic, Inc., , TW;

Attorney:

Heller Ehrman White & McAuliffe, LLP

Primary Examiner:

John F Niebling

Assistant Examiner:

John Murphy

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438680 ; 438622 ; 134-12 ;
Abstract

A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.

Find Patent Forward Citations

Lo, Yung-Tsun. (2000). Method of making ic devices having stable cvd titanium nitride films (U.S. Patent No. 6096645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6096645

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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