The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Jul. 26, 1999
Ing-Tang Chen, Taipei, TW;
Horng-Bor Lu, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-chu, TW;
Abstract
The present invention provides a method of forming a dielectric layer on a semiconductor wafer. The semiconductor wafer comprises a bottom dielectric layer and a plurality of metal lines each having a rectangular cross section positioned on the bottom dielectric layer. The method is performed in a high-density plasma chemical vapor deposition apparatus. A first deposition process at a first etching/deposition (E/D) ratio is performed to form a first dielectric layer with a predetermined thickness on the semiconductor wafer. The first dielectric layer covers the surface of the metal lines and forms a triangular ridge above each metal line. The upper side of each of the ridges has two slanted side-walls. Then, a second deposition process at a second E/D ratio is performed to form a second dielectric layer with a predetermined thickness on the semiconductor wafer with the second deposition process etching rate being near zero. The second dielectric layer above each metal line reduces the slope of the two slanted side-walls of the ridges. Thus, a dielectric layer with the first dielectric layer and the second layer is formed.