The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Jun. 02, 1999
Takeshi Nogami, Kanagawa, JP;
Robert Chen, Los Altos, CA (US);
Guarionex Morales, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A substantially inert capping layer of tungsten nitride is deposited on cobalt layers prior to silicidation, thereby avoiding any substantial interaction with cobalt. The tungsten nitride capping layer also functions as a diffusion barrier preventing oxygen from reaching the silicidation area. The resulting cobalt silicides layer exhibit lower resistivity than those formed employing a titanium capping layer. Embodiments include rapid thermal annealing to initially form a layer of cobalt monosilicide consuming a portion of the cobalt layer, removing the tungsten nitride and unreacted cobalt layer, and rapid thermal annealing again to convert the cobalt monosilicide layer to a low resistivity layer of cobalt disilicide.