The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Feb. 05, 1999
Applicant:
Inventors:
Chung-Te Lin, Tainan, TW;
Shwangming Jeng, Hsin-Chu, TW;
Yuan-Horng Chiu, Taipei, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438425 ; 438436 ; 438437 ;
Abstract
A method to reduce to reduce DRAM capacitor STI junction leakage current. A Shallow Trench Isolation opening is formed, within this opening Field Oxide is deposited. The top surface of the FOX is etched down and a second layer of oxide is deposited over the FOX and the adjacent active regions. This second layer of oxide is etched bringing the top surface down to below the level of the top surface of the surrounding active areas but leaving spacers where the top surface of the FOX intersects with the active areas.