The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Jul. 02, 1997
Sudhakar Subrahmanyam, Sunnyvale, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Mukul Kelkar, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Apparatus and methods are disclosed for utilizing a plasma cleaning operation of a CVD system incorporating cleaning process endpoint detection. In one embodiment, the cleaning process is performed at a constant exhaust capacity and the endpoint detection is in response to a specified rate of change of chamber pressure. In another embodiment, a servo-controlled exhaust system maintains a controlled chamber pressure and the endpoint detection is in response to a specified control signal. In a preferred embodiment, nitrogen trifluoride is converted into a plasma containing free fluorine radicals in a magnetron-powered remote microwave plasma generator. The remotely produced free fluorine radicals are used to remove silicon nitride deposits from a substrate processing chamber. The use of such a remote plasma system provides an efficient cleaning process that takes as little as half the time compared to similar in situ plasma cleaning processes. The incorporation of endpoint detection provides optimal cleaning time for the remote plasma cleaning process.