The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Feb. 12, 1999
Ching-Wen Cho, Chu-San, TW;
Hua-Yu Yang, Kaohsiung, TW;
Sen-Fu Chen, Taipei, TW;
Chih-Heng Shen, Hshiu-chu, TW;
Wen-Cheng Chien, Kaohsiung, TW;
Chang-Jen Wu, Taipei, TW;
Chi-Hsin Lo, Ping-Jeng, TW;
Hui-Chen Chu, San- Min Area Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for forming a CMOS image sensor spacer structure. A polysilicon gate electrode is formed on a substrate; a thin layer of first dielectric is deposited over the exposed surfaces of the gate electrode and the top of the substrate. Next a second layer of dielectric is deposited after which etching is performed to create the electrode spacer. The deposited second layer of dielectric serves as an etch stop and prevents damage to the substrate surface between spacers of the gate electrodes. An alternate method uses a thin ply layer as the stop layer and, in so doing, source/drain damage caused by the white pixel problem.