The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Feb. 13, 1998
Applicant:
Inventors:
Wen-Cheng Chien, Kao-Hsiung County, TW;
Hui-Chen Chu, Kao-Hsiung County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438266 ; 438595 ;
Abstract
A method is provided for forming multi-layer spacer GELS) for flash EEPROM devices. A composite tetraethyl orthosilicate-silicon nitride (TEOS/Si.sub.3 N.sub.4) layer is deposited over the floating gate and anisotropically etched to form the MLS. The resulting MLS is better controlled dimensionally with the attendant advantage, therefore, of better definition of gate and channel lengths in the memory cell for more predictable and better programming and erase performance of EEPROMS.