The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Nov. 19, 1997
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438261 ; 438264 ; 438528 ; 438910 ;
Abstract
A process for manufacturing a non-volatile semiconductor memory device by forming a tunnel dielectric film, a floating gate electrode, an interlayer capacitive film and a control gate electrode successively on a semiconductor substrate includes introducing nitrogen atoms into at least one of an interface between the floating gate electrode and the interlayer capacitive film and an interface between the interlayer capacitive film and the control gate electrode.
Tanigami, Takuji. (2000). Process for manufacturing non-volatile semiconductor memory device by (U.S. Patent No. 6069041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6069041
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile