The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Dec. 18, 1997
Mark I Gardner, Cedar Creek, TX (US);
H Jim Fulford, Austin, TX (US);
Mark C Gilmer, Austin, TX (US);
Robert Paiz, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device is formed by forming a sacrificial plug over a substrate and forming active regions in the substrate adjacent the sacrificial plug. A film is then formed over portions of the substrate adjacent the sacrificial plug. The sacrificial plug is then selectively removed leaving an opening in the film, and a gate electrode is formed in the opening. The sacrificial plug can be formed from several materials including, for example, polysilicon and nitrogen-bearing species such as nitride. The gate electrode may, for example, be formed from temperature-sensitive metals such as copper since the gate electrode may be formed subsequent to high temperature steps of the fabrication, such as a source drain anneal, for example.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile