The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2000

Filed:

Sep. 28, 1998
Applicant:
Inventors:

Jiong Chen, Beverly, MA (US);

Peter Kellerman, Essex, MA (US);

A Stuart Denholm, Lincoln, MA (US);

Assignee:

Eaton Corporation, Cleveland, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
1187 / ; 118712 ; 118715 ; 156345 ;
Abstract

Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.


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