The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2000

Filed:

Nov. 19, 1997
Applicant:
Inventors:

Stephen P DeOrnellas, Santa Rosa, CA (US);

Alfred Cofer, Petaluma, CA (US);

Leslie G Jerde, Novato, CA (US);

Kurt A Olson, Sebastopol, CA (US);

Paritosh Rajora, Petaluma, CA (US);

Assignee:

Tegal Corporation, Petaluma, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438715 ; 438714 ; 438720 ; 216 71 ; 216 75 ; 216 76 ; 216 78 ;
Abstract

A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor 20 and controlling the temperature of the wafer 26 by controlling the pressure of the gas contacting the backside of the wafer 26 and/or providing a heat source 56 such as for example in the chuck 46 or electrode 28 associated with the wafer 26 in order to heat the wafer 26.


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