The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Oct. 19, 1998
Applicant:
Inventor:
Charles R Spinner, III, Dallas, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257304 ; 257296 ; 257379 ; 257903 ; 365 51 ; 365 63 ;
Abstract
A method for fabricating polycrystalline silicon resistor structures includes steps directed to the provision of a polycrystalline silicon structure having a decreased width. In one embodiment, sidewall spacers are used to narrow a region in which the polycrystalline silicon resistors are formed. In an alternative embodiment, polycrystalline silicon resistors are formed as sidewall structures in a resistor region. Use of either technique provides a reduced cross-section for the resistor structures, allowing shorter resistors to be used, or providing increased resistance for longer resistors.