The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Dec. 23, 1997
Rainer Florian Schnabel, Wappingers Falls, NY (US);
Xian J Ning, Mohegan Lake, NY (US);
Bruno Spuler, Wappingers Falls, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
An improved method of forming a bond pad (222) by performing a dual damascene etch through a layer stack (200) disposed above a substrate (204) using self aligned vias (216). The layer (200) stack includes an underlying conductive layer (208) and an insulating layer (202) disposed above the underlying conductive layer (208). The method includes the following operative steps. At least a via hole (216) is formed in the insulating layer (202) positioned over the underlying device layer (208) and extending to the underlying device layer (208) at the bottom of the via hole. A bond pad trench (218) is then formed that takes the form of the desired bond pad (222). A layer of conductive material (220) is then placed over the insulating layer (202) substantially simultaneously filling the via hole (216) and the bond pad trench (218). The bond pad (222) is then formed by removing the layer of conductive material (220) sufficient to expose the upper surface of the insulating layer (210).