The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Jan. 30, 1998
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A wafer is diced up to a depth of 15 .mu.m from the surface of a sapphire substrate along a dicing line set in the center of a processed region between electrodes for respective devices by using a blade having a width narrower than the width of the processed region, so that separation grooves are formed. In the present invention, the first contact layer, the second contact layer, the p layer, the light-emitting layer and the n layer are arranged in a region between a side surface of the blade and a side wall of the electrode formation region. Accordingly, stress is concentrated into an intersection line of the electrode formation region and the side wall which is erected so as to be L-shaped. Thus, cracks generated at the time of dicing are formed-toward the intersection line. As a result, the cracks never enter into the electrode formation region and, accordingly, never enter into the lower portion of the electrode. Accordingly, the current path for the electrode is prevented from being disturbed by the cracks.