The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Dec. 30, 1997
Applicant:
Inventor:
Chia-Chieh Yu, Taipei, TW;
Assignee:
United Semiconductor Corp., , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ;
U.S. Cl.
CPC ...
216 72 ; 216 39 ; 216 58 ; 216 67 ; 216 77 ; 216 78 ; 216 79 ;
Abstract
A method for improving the differential etching rate of forming vias in a metallic layer by the addition of a nitrogen plasma processing operation into the conventional metal etching operation. The nitrogen plasma processing operation facilitates the formation of aggregates through a chemical reaction between gaseous nitrogen and metal. The aggregates are able to lower the etching rate of metal in such a way that its effect on a wide-open via is more than on a narrow-dense via. Hence, microloading effect on the etching rate is greatly improved.