The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Apr. 07, 1997
Applicant:
Inventors:
Yuan-Chang Huang, Miao Li Hsien, TW;
Yung-Kuan Hsiao, Hsinchu, TW;
Dah Jong Ou Yang, Taipei Hsien, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438397 ; 438253 ; 438254 ; 438396 ;
Abstract
The present invention is a method for reducing particles during the manufacturing of fin or cylinder capacitors on a wafer. This invention utilizes a negative photoresist wafer edge exposure process to protect the edge of a wafer. This prevents polysilicon peeling from the edge of the wafer so as to reduce the defects and particles appearing on the wafer.