The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Jun. 15, 1998
Yoshiaki Hasegawa, Osaka, JP;
Akihiko Ishibashi, Osaka, JP;
Nobuyuki Uemura, Osaka, JP;
Yuzaburo Ban, Osaka, JP;
Masahiro Kume, Shiga, JP;
Yoshihiro Hara, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Ayumu Tsujimura, Osaka, JP;
Matsushita Electric Industrial Co. Ltd., Osaka, JP;
Abstract
On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.