The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Jul. 10, 1998
Sung-Mu Hsu, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
An anti-reflective reticle and a method by which the anti-reflective reticle is formed. Formed upon a first surface of a transparent substrate is a patterned metal layer. Formed upon the first surface of the transparent substrate including the patterned metal layer is a two-layer dielectric stack. The two layer dielectric stack has a first dielectric layer which is closer to the transparent substrate and a second dielectric layer which is formed directly upon the first dielectric layer. The first dielectric layer has an index of refraction greater than the index of refraction of the transparent substrate or the second dielectric layer. The second dielectric layer has a thickness of about one-quarter the wavelength of reflected light desired to be attenuated or eliminated from the surface of the reticle. In addition, the first dielectric layer is formed completely covering a series of metal features within the patterned metal layer and completely covering portions of the transparent substrate exposed adjoining the series of metal features within the patterned metal layer. Preferably, the second dielectric layer is formed co-extensive with the first dielectric layer.