The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Dec. 30, 1998
Applicant:
Inventor:
C C Hsue, Hsinchu, TW;
Assignee:
United Microelectronic Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 36523005 ;
Abstract
A dual port random access memory (RAM). The dual port random access memory includes four N-MOS transistors and four P-MOS transistors. Both the N-MOS and the P-MOS transistors are used as pass gates. More specifically, two N-MOS transistors are used as pass gate for a set of bit lines and two P-MOS transistors are used as a pass gate to another set of bit lines.