The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Nov. 21, 1997
Applicant:
Inventors:
Haojiang Li, San Jose, CA (US);
Robert W Wu, Pleasanton, CA (US);
Assignee:
Applied Materials Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
1187 / ; 1187 / ; 1187 / ; 1187 / ; 1563 / ; 216-2 ; 216 37 ; 216 58 ; 216 63 ; 216 67 ; 216 68 ; 216 71 ; 216 74 ; 216 79 ; 216 99 ; 20419232 ; 20419237 ; 20429831 ; 20429833 ; 20429834 ;
Abstract
A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.