The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Sep. 21, 1998
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming an anti-reflective-coating(ARC) layer is described. This ARC layer performs not only in its capacity to reduce reflections from its subjacent metal layer during the metal patterning photoresist exposure, but also serves as an effective etch inhibitor during subsequent via etching. Of particular importance is the ability provided by this ARC layer to sustain its etch resistance during considerable over etching such as is required when vias of different depths are to be opened. The ARC layer differs from the conventional titanium nitride ARC layer in that it has a base layer of titanium below the titanium nitride portion. It is this titanium layer and an optional intermediate Ti rich layer that sustains the over etch. Additionally, the titanium forms an improved bonding with the metal beneath providing reduced via contact resistance and greater via stability and consistency.