The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Oct. 29, 1997
Yoshihiro Tezuka, Kofu, JP;
Kunihiro Tada, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile