The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Apr. 06, 1998
Ai-Qiang Zhang, Singapore, SG;
Jian-Hui Ye, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for forming an anti-reflective coating (ARC) layer within a fabrication and a fabrication having the anti-reflective coating (ARC) layer formed therein. To practice the method, there is first provided a substrate. There is then formed over the substrate a reflective layer. There is then formed upon the reflective layer an organic polymer anti-reflective coating (ARC) layer, where the organic polymer anti-reflective coating (ARC) layer is formed from an organic polymer anti-reflective coating (ARC) material which is not susceptible to a hydrolysis reaction. There may then be formed upon the organic polymer anti-reflective coating (ARC) layer a photoresist layer which is photoexposed and developed to form a patterned photoresist layer which may be employed as an etch mask for forming a patterned reflective layer from the reflective layer. The patterned reflective layer so formed is formed with uniform and reproducible linewidth dimension.